? 2014 ixys all rights reserved 1 - 5 20140129 MIXD80PM650TMI ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e application: ? ac motor control ? ac servo and robot drives ? ups ? solar features: ? easy paralleling due to the positive temperature coeffcient of the on-state voltage ? rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - square rbsoa @ 2x i c - low emi ? thin wafer technology combined with the xpt design results in a competitive low v ce(sat) ? sonic? diode - fast and soft reverse recovery - low operating forward voltage ? optimized for solar applications - t2/t3 re-inforced package: ? compatible to easy2b package ? pins for pressft connection ? with dcb base part name (marking on product) MIXD80PM650TMI i c80 (t1/t4) = 82 a i c80 (t2/t3) = 110 a v ces = 650 v v ce(sat) typ. = 1.5 v igbt modules multi level xpt igbt technology t1 d1 + d5 t2 t3 t4 d6 d2 d3 d4 u n e1 g1 _ e2 g2 e3 g3 e4 g4 th1 th2 ntc
? 2014 ixys all rights reserved 2 - 5 20140129 MIXD80PM650TMI ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e igbts t1 / t4 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c 650 v v ges max. dc gate voltage continuous 20 v i c25 i c80 collector current t c = 25c t c = 80c 108 82 a a p tot total power dissipation t c = 25c 275 w v ce(sat) collector emitter saturation voltage i c = 75 a; v ge = 15 v t vj = 25c t vj = 150c 1.5 1.75 1.7 v v v ge(th) gate emitter threshold voltage i c = 1.2 ma; v ge = v ce t vj = 25c 5.0 5.8 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c 20 250 a i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 500 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = 1 mhz tbd nf q g(on) total gate charge v ge = 0...15 v 130 nc t d(on) t r t d(off) t f e on e off e rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load t vj = 150c v ce = 300 v; i c = 75 a v ge = 15 v; r g = 10 w 25 45 120 40 0.9 1.8 tbd ns ns ns ns mj mj mj i cm v cek reverse bias safe operating area rbsoa; v ge = 15 v; r g = 10 w ; l = 100 h clamped inductive load ; t vj = 150c 150 v ces a v t sc (scsoa) short circuit safe operating area v ce = 360 v; v ge = 15 v; t vj = 150c r g = 10 w; non-repetitive 300 10 s a r thjc thermal resistance junction to case (per igbt) 0.55 k/w r thch thermal resistance case to heatsink (per igbt) 0.18 k/w diodes d1 - d4 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 650 v i f25 i f80 forward current t c = 25c t c = 80c 73 53 a a symbol conditions characteristic values min. typ. max. v f forward voltage i f = 75 a t vj = 25c t vj = 150c 1.7 1.8 2.0 v v q rr i rm t rr e rec(off) reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery losses at turn-off v r = 300 v; i f = 75 a di f /dt = -1200 a/s t vj = 150c 7 65 150 1.5 c a ns mj r thjc thermal resistance junction to case (per diode) 1.0 k/w r thch thermal resistance case to heatsink (per diode) 0.35 k/w
? 2014 ixys all rights reserved 3 - 5 20140129 MIXD80PM650TMI ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e igbts t2 / t3 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c 650 v v ges max. dc gate voltage continuous 20 v i c25 i c80 collector current t c = 25c t c = 80c 147 110 a a p tot total power dissipation t c = 25c 375 w v ce(sat) collector emitter saturation voltage i c = 100 a; v ge = 15 v t vj = 25c t vj = 150c 1.5 1.75 1.7 v v v ge(th) gate emitter threshold voltage i c = 1.6 ma; v ge = v ce t vj = 25c 5.0 5.8 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c 20 250 a i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 500 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = 1 mhz tbd nf q g(on) total gate charge v ge = 0...15 v 180 nc t d(on) t r t d(off) t f e on e off e rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load t vj = 150c v ce = 300 v; i c = 100 a v ge = 15 v; r g = 8.2 w 25 45 120 40 2 2.4 tbd ns ns ns ns mj mj mj i cm v cek reverse bias safe operating area rbsoa; v ge = 15 v; r g = 8.2 w ; l = 100 h clamped inductive load ; t vj = 150c 200 v ces a v t sc (scsoa) short circuit safe operating area v ce = 360 v; v ge = 15 v; t vj = 150c r g = 8.2 w; non-repetitive 400 10 s a r thjc thermal resistance junction to case (per igbt) 0.40 k/w r thch thermal resistance case to heatsink (per igbt) 0.13 k/w diodes d5 / d6 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 650 v i f25 i f80 forward current t c = 25c t c = 80c 114 83 a a symbol conditions characteristic values min. typ. max. v f forward voltage i f = 100 a t vj = 25c t vj = 150c 1.7 1.8 2.0 v v i r leakage current v r = 650 v t vj = 25c 20 200 a q rr i rm t rr e rec(off) reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery losses at turn-off v r = 300 v; i f = 100 a di f /dt = -1500 a/s t vj = 150c 9.5 95 150 2.5 c a ns mj r thjc thermal resistance junction to case (per diode) 0.6 k/w r thch thermal resistance case to heatsink (per diode) 0.2 k/w
? 2014 ixys all rights reserved 4 - 5 20140129 MIXD80PM650TMI ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/50 resistance t c = 25c 4.75 5.0 3375 5.25 kw k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 150 175 125 c c c v isol isolation voltage i isol < 1 ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 11.5 10.0 mm mm weight 40 g r pin-chip resistance pin to chip v = v cesat + 2ri c resp. v = v f + 2ri f 6 mw equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 igbt t1/t4 t vj = 175c 0.8 16 v mw v 0 r 0 igbt t2/t3 t vj = 175c 0.8 12 v mw v 0 r 0 diode d1/d4 t vj = 175c 1.2 12 v mw v 0 r 0 diode d5/d6 t vj = 175c 1.2 9 v mw i 0 2 5 5 0 7 5 10 0 12 5 15 0 1 0 2 1 0 3 1 0 4 1 0 5 r [ w ] typ. ntc resistance v s . temperature t c [c ]
? 2014 ixys all rights reserved 5 - 5 20140129 MIXD80PM650TMI ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e ordering part name marking on product delivering mode base qty ordering code standard MIXD80PM650TMI MIXD80PM650TMI blister 20 514219 outline drawing dimensions in mm (1 mm = 0.0394) pin positions with tolerance ? 0.4 32 28.8 25.6 16 12.8 6.4 3.2 3.2 9.6 12.8 16 19.2 22.4 25.6 28.8 32 38.4 41.6 44.8 48 g3 t1 t2 e4 g4 n n n n n n g1 e1 e2 g2 u u u u u u u u e3' 56.7 0.3 22.7 0.5 16.4 0.2 2.3 -0.1 x 8.5 +0.3 48 0.3 53 0.1 62.8 0.5 42 0.15 51 0.1 16.4 0.5 1.4 0.5 12 0.35 product marking t1 d1 + d5 t2 t3 t4 d6 d2 d3 d4 u n e1 g1 _ e2 g2 e3 g3 e4 g4 th1 th2 ntc
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